Impact of Process-Induced Variations on Negative Capacitance Junctionless Nanowire FET
نویسندگان
چکیده
In this study, the impact of negative capacitance (NC) effect on process-induced variations, such as work function variation (WFV), random dopant fluctuation (RDF), and line edge roughness (LER), was investigated compared to those baseline junctionless nanowire FET (JL-NWFET) in both linear (Vds = 0.05 V) saturation 0.5 modes. Sentaurus TCAD MATLAB were used for simulation JL-NWFET (NC-JL-NWFET). Owing NC effect, NC-JL-NWFET showed less terms device performance, σ[Vt], σ[SS], σ[Ion/Ioff], σ[Vt]/µ[Vt], σ[SS]/µ[SS], σ[Ion/Ioff]/µ[Ion/Ioff], enhanced which implies that can successfully control variation-induced degradation.
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ژورنال
عنوان ژورنال: Electronics
سال: 2021
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics10161899